bas 70-06s oct-07-1999 1 silicon schottky diode array ? general-purpose diode for high-speed switching ? circuit protection ? voltage clamping ? high-level detecting and mixing vps05604 6 3 1 5 4 2 eha07288 6 54 3 2 1 a1/a2 c2 c1 a1/a2 c2 c1 di1 di2 marking pin configuration type package bas 70-06s 76s 1=c1 2=c2 3=a1/a2 4=c1 5=c2 6=a1/a2 sot-363 maximum ratings parameter symbol value unit diode reverse voltage v r 70 v forward current i f 70 ma surge forward current (t < 10ms) i fsm 100 total power dissipation , t s 72 c p tot 250 mw junction temperature t j 150 c operating temperature range t op -55 ... 150 storage temperature t st g -55 ... 150 thermal resistance junction - ambient 1) r thja 545 k/w junction - soldering point r thjs 310 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bas 70-06s oct-07-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values min. max. typ. dc characteristics breakdown voltage i (br) = 10 a v (br) 70 v - - i r - - - - 0.1 10 reverse current v r = 50 v v r = 70 v a forward voltage i f = 1 ma i f = 10 ma i f = 15 ma v f 300 600 750 375 705 880 410 750 1000 mv ac characteristics diode capacitance v r = 0 v, f = 1 mhz c t - 1.6 2 pf charge carrier life time i f = 25 ma - - 100 ps differential forward resistance i f = 10 ma, f = 100 mhz r f - 30 - ?
bas 70-06s oct-07-1999 3 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 20 40 60 ma 100 i f t s t a permissible pulse load r thjs = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bas 70-06s oct-07-1999 4 forward current i f = f ( v f ) t a = parameter 0.0 ehb00042 bas 70w/bas 170w v f f 10 -1 -2 10 0 10 1 10 2 10 ma 0.5 1.0 v 1.5 t a = -40 c 25 c 85 c 150 c reverse current i r = f ( v r ) t a = parameter 0 ehb00043 v r r 10 -1 -3 10 0 10 1 10 2 10 a 10 -2 20 40 60 v 80 t a = 150 c 85 c 25 c bas 70w/bas 170w differential forward resistance r f = f ( i f ) f = 10 khz 0.1 10 ehb00045 r f 1 10 ma 100 f 0 1 10 2 10 3 10 ? bas 70w/bas 170w diode capacitance c t = f ( v r ) f = 1mhz 0 0.0 ehb00044 c v r t 20 40 60 v 80 0.5 1.0 1.5 pf 2.0 bas 70w/bas 170w
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